| abstract |
One method includes depositing a dielectric cap over a gate structure. After forming the dielectric cap, a source/drain contact is formed over a source/drain region. A top of the dielectric cap is doped to form a doped region in the dielectric cap. After doping the top of the dielectric cap, an etch stop layer and an interlayer dielectric (ILD) layer are deposited over the dielectric cap. A via opening is formed to extend through the ILD layer and the etch stop layer to expose the source/drain contact. A source/drain via is filled in the via opening. |