| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-89
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-943 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-945
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate |
2013-05-15^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-02-03^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c37e5c6eb02fb86d2fb9d28ae7ff87c9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7eeb7c5fe0dc5a5fbafb4ecfeae8b77 |
| publicationDate |
2022-02-03^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-112013001687-B4 |
| titleOfInvention |
Semiconductor structure and method for its manufacture |
| abstract |
Semiconductor structure comprising: a trench capacitor (12, 14, 16) embedded in a substrate (8) and having an inner electrode (16), a node dielectric (14), and an outer electrode (12); a conductive cover structure (18) in contact with and overlying the inner electrode; a semiconductor nanowire (30N) overlying an insulator layer (20) in the substrate, the semiconductor nanowire being vertically spaced from a planar top surface of the insulator layer and a longitudinal direction of the semiconductor nanowire being parallel to the planar top surface of the insulator layer; a source region (62) in contact with an end of the semiconductor nanowire; and a metal-semiconductor alloy source-side portion (72) in contact with said source region and said conductive cap structure, said metal-semiconductor alloy source-side portion (72) a subregion below of the source region and in contact with it and a sub region above and in contact with it. |
| priorityDate |
2012-06-07^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |