| abstract |
A broadband ultraviolet illumination source for a characterization system is disclosed. The broadband ultraviolet illumination source includes a housing having one or more walls, the housing being configured to contain a gas, and a plasma discharge device based on a graphene dielectric semiconductor (GOS) type planar structure. The GOS structure includes a silicon substrate having a top surface, a dielectric layer disposed on the top surface of the silicon substrate, and at least one graphene layer disposed on a top surface of the dielectric layer. A metal contact may be formed on the top surface of the graphene layer. The GOS structure has several advantages for use in an illumination source, such as low operating voltage (below 50V), planar surface electron emission, and compatibility with standard semiconductor processes. The broadband ultraviolet illumination source further includes electrodes placed inside the case or magnets placed outside the case to increase current density. |