http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-19882883-B4
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8b2c578deee12f181b4199f7256a73af |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T117-10 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4418 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-02 |
| filingDate | 1998-12-15^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2009-02-26^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ec70cfca3ed5117d9988aa64d12bc43 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f576dafc859c7bfbd29b2d1de32d86bb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dfcff0ddd0bc4276e0c62e888c5956b5 |
| publicationDate | 2009-02-26^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | DE-19882883-B4 |
| titleOfInvention | Chemical vapor deposition system for producing polycrystalline silicon rods |
| abstract | A method of producing a polycrystalline silicon rod (14) by depositing polycrystalline silicon on the deposition surface of a rod in a reactor, the method comprising the steps of: - Providing a silicon filament (17, 18) in the reactor; - Heating the silicon filament (17, 18) by electric current through the filament (17, 18); and Depositing polycrystalline silicon on the heated filament (17, 18) by chemical vapor deposition of silicon from the gas phase due to thermal decomposition of a silicon-containing gas to form a polycrystalline silicon rod (14), characterized by generating an alternating current of sufficiently high frequency in the silicon rod (14) during the chemical vapor deposition to produce a skin effect which causes the greater part of the current to flow through an outer region of the silicon rod (14) adjacent the outer surface to provide more heat in the outer regions than in to create the inner regions of the rod (14). |
| priorityDate | 1997-12-15^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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