| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3070783318d4f17db6ad97e418a5503 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-27001
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01078
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01058
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-04026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-32245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01044
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-83
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-274 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-83
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-29
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-4924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-32 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-492 |
| filingDate |
1982-03-27^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ad47735ba278f0cfa4a54e8536cf0f1 |
| publicationDate |
1983-09-29^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-3211391-A1 |
| titleOfInvention |
METHOD FOR PRODUCING A SEMICONDUCTOR ARRANGEMENT |
| abstract |
The invention relates to a method of producing a semiconductor device from a semiconductor wafer containing a multiplicity of semiconductor devices. According to the invention, a grid-type partitioning which corresponds to the grid-type partitioning of the front is applied to the back of the semiconductor wafer. Gold contact layers separated from one another by the grid-type partitioning are deposited inside the units of the grid. Finally, the semiconductor wafer is divided up along the gold-free grid lines between the individual elements. |
| priorityDate |
1982-03-27^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |