http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-4413824-A1
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fbd7063eee731fa36db57b14b15418d3 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N1-028 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14825 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-148 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-148 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N1-028 |
filingDate | 1994-04-20^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_334aab6f642ead6840d1c82cb89f947c |
publicationDate | 1995-08-24^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | DE-4413824-A1 |
titleOfInvention | Linear solid state imaging device |
abstract | The image pick=up includes in the silicon substrate (21) of first conductivity a first well (22) of preset semiconductor junction depth, a second well (23) of greater junction depth, and photodiode arrays (24) in the first well in cell-shaped arrangement. The photodiode arrays have mutually oblique longitudinal sides and different width on opposite front sides. A HCCD region (25) is coupled to the wide front side of the photodiode array via a hexagonal slide gate channel region (26). The HCCD region extends up to region below one slide gate (28) above the channel region. Further poly-gates (29) are located above the HCCD region. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-3053529-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018001791-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10665624-B2 |
priorityDate | 1994-02-23^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Predicate | Subject |
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isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 |
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