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publicationDate 1994-11-03^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber DE-4414729-A1
titleOfInvention Material for a lead frame and lead frame for semiconductor components
abstract Material (3) for a line frame, consisting of a copper or copper-alloy base strip (1) and a protective layer (2) on one or both surfaces of the base strip (1). The protective layer (2) consists of at least one metal from the group comprising gold, hard gold, silver, silver alloy, palladium and palladium alloy and has a thickness of 10 to 500 angstroms. The protective layer (2) is deposited by vacuum evaporation (sputtering). It is also possible to apply a nickel or nickel alloy intermediate layer between the base strip (1) and the associated protective layer (2) by vacuum evaporation or by electrolytic coating. An intermediate layer thickness of 50 to 20,000 angstroms is advantageous. <IMAGE>
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