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filingDate 1980-01-03^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1980-08-20^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0014303-A1
titleOfInvention Method for making integrated MOS circuits by the silicon-gate technique
abstract Method for producing integrated MOS circuits using silicon gate technology with self-aligned contacts using silicon nitride masks. After the contact holes have been etched to form contacts between the monocrystalline doped regions (5) and the poly-silicon regions (4) or the metallic interconnects (12), the insulation layer (10) is produced in that, after appropriate masking of the regions to be contacted using an oxidation-inhibiting silicon nitride layer, an additionally applied layer that is doped in accordance with the doped regions in the silicon substrate is converted into an insulating layer (10) by local oxidation. This avoids short circuits and enables a greater packing density of the circuits per unit area.
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