http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0043541-A1

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filingDate 1981-06-30^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1982-01-13^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0043541-A1
titleOfInvention Process for production of a silicon carbide composite
abstract Sintered silicon carbide composites containing diamond crystals are described. They are made through a process comprising:n (a) forming a first dispersion of diamond crystals and carbon black in paraffin; (b) forming a second dispersion of carbon fiber, carbon black and filler in paraffin; (c) compacting said dispersions together to produce an integral bi-layer composite; (d) subjecting said composite to a vacuum for a period of time at a temperature sufficient to vaporize essentially all of said paraffin; (e) heating silicon to cause liquefaction and direct infiltration into both layers of said composite; and (f) sintering the composite containing silicon under conditions sufficient to produce a β-silicon carbide binder uniting said composite. n The resultant composites are particularly useful as cutting materials and/or wear components, where they exhibit extreme wear resistance.
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