| abstract |
A resistor material is provided which is substantially a mixture of silicon nitride and metal (tungsten or molybdenum) and/or metal silicide particles dispersed in the nitride. n A thin film resistor is formed of a layer of such material provided on a substrate. n Such resistor material, or such a resistor, of such a structure is provided for example by reactive sputtering, in a nitrogen-containing atmosphere, in which silicon and metal are co-sputtered by ion bombardment of a suitable target or targets. |