| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c8e6a13e4ae501eb40decf5732cf09c6 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-105 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-105 |
| filingDate |
1984-10-10^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_550df9aaa77c1c5478d94b2d2ba8a694
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7dfd511456d669fc14cc69fa673f10c9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de65f20da1a0e2888de33050f9350eda |
| publicationDate |
1985-12-04^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0162859-A1 |
| titleOfInvention |
GERMANIUM PIN PHOTODETECTOR ON A SILICON CARRIER. |
| abstract |
Devices useful for example as detectors in telecommunications systems and having a specific structure. In particular, a p-i-n device is manufactured on a silicon substrate (10) provided with the circuits necessary for signal processing. This p-i-n device is produced by deposition of an intermediate region (20) endowed with a composition gradient on this substrate (10) and formation of a p-i-n diode based on germanium on the intermediate region (20). |
| priorityDate |
1983-11-21^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |