http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0184350-A1

Outgoing Links

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K3-013
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K3-013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K3-037
filingDate 1985-11-19^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b521266df0eb9936a2e7117729d2a21a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0170af335c78c0c51116bf5d0b530e5
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publicationDate 1986-06-11^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0184350-A1
titleOfInvention Semiconductor latch circuit
abstract The latch circuit includes at least three gate circuits (3, 1, 2), and a noise resistance circuit (8). A first gate circuit (3) receives a data signal (DT) and a clock signal (CLK). A second gate circuit (1) is operatively connected to an output of the first gate circuit (3). A third gate circuit (2) receives an inverted clock signal ( CLK ) at an input terminal, is operatively connected to an output of the second gate circuit (1) at another input terminal, and is operatively connected to another input terminal of the second gate circuit (1), at an output terminal, so that a feedback line is formed between the second and third gate circuits (1, 2). The noise resistance circuit (8) has at least a signal delay element in the feedback line. The noise resistance circuit (8) may include a filter circuit. The noise resistance circuit (8) may also include an amplifier circuit.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0330707-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5187385-A
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priorityDate 1984-11-19^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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