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publicationNumber EP-0260906-A2
titleOfInvention Method of producing semiconductor device and semiconductor device
abstract A method of producing a semiconductor device comprising the steps of depositing an alloy film (14) including copper (Cu) on a substrate (10,12), patterning the alloy film, and annealing the patterned alloy film in an ambient atmosphere including at least nitrogen (N₂) gas, so that a copper interconnection film (18) covered by a nitride film (16) is formed.
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