| abstract |
In this invention, in the principal surface portion of an impurity region of first conductive type composing a PN junction photo diode, an impurity region of reverse conductive type is formed in the almost entire region except for a part of side area of an electric charge reading part. When the impurity region of reverse conductive type is formed in the principal surface portion of the impurity region of one conductive type, the interface trap level generated in the interface of the semiconductor substrate and silicon dioxide film on its surface can be reduced, so that the generation of dark current may by significantly decreased. |