http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0422243-B1
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-511 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-105 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-452 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-511 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52 |
filingDate | 1990-03-30^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 1994-09-21^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e29e2c8de48e39bb07bcd282588c29c7 |
publicationDate | 1994-09-21^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | EP-0422243-B1 |
titleOfInvention | Method of forming polycrystalline film by chemical vapor deposition |
abstract | A method of forming a polycrystalline deposit film from a hydrogen gas and a film-forming gas by chemical vapor deposition, which comprises the steps of: exciting the hydrogen gas by contact with an activation energy in a space other than a film-forming space of a film-forming chamber wherein a film-forming base is provided to thereby generate active species (H); introducing the active species (H) and the film-forming gas into the film-forming space at the same time but separate from each other; bringing the active species (H) into contact with the film-forming gas by mixing them in the film-forming chamber to form a plasma region in this chamber kept under a given pressure; and forming a film while periodically varying the density of distribution of the active species (H) near the surface of the base kept at a given temperature. |
priorityDate | 1989-03-31^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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