http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0422243-B1

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-452
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filingDate 1990-03-30^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1994-09-21^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e29e2c8de48e39bb07bcd282588c29c7
publicationDate 1994-09-21^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0422243-B1
titleOfInvention Method of forming polycrystalline film by chemical vapor deposition
abstract A method of forming a polycrystalline deposit film from a hydrogen gas and a film-forming gas by chemical vapor deposition, which comprises the steps of: exciting the hydrogen gas by contact with an activation energy in a space other than a film-forming space of a film-forming chamber wherein a film-forming base is provided to thereby generate active species (H); introducing the active species (H) and the film-forming gas into the film-forming space at the same time but separate from each other; bringing the active species (H) into contact with the film-forming gas by mixing them in the film-forming chamber to form a plasma region in this chamber kept under a given pressure; and forming a film while periodically varying the density of distribution of the active species (H) near the surface of the base kept at a given temperature.
priorityDate 1989-03-31^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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