| abstract |
A growth method according to which a layer (1) of a material having openings (5) is produced on the surface of a substrate. In each opening a material is deposited which when liquid can absorb the material to be grown. Growth is then carried out in the vapor phase. The material of the layer (1) is chosen so that there is no growth or nucleation on its surface during growth in the vapor phase.n n n Applications : Realization of filamentary single crystals positioned with precision.n n n Realization of pointed microcathodes. |