| abstract |
A plasma-chemical vapor-phase epitaxy system or a chemical vapor deposition (CVD) system which can produce a large-sized thin film of good quality is provided. The improved CVD system comprises a vacuum container (21, 21a, 21b, 21c) having a quartz glass window (23, 23a, 23b, 23c), a substrate (22, 22a, 22b, 22c) disposed within the vacuum container as opposed to the window, an antenna type discharge electrode (24, 24a, 24b, 24c) disposed outside of the vacuum container as opposed to the window, and a high-frequency power supply (27) for feeding electric power to the same electrode. In this way, by disposing an electrode outside of a container and exciting with high-frequency electromagnetic waves, a large-sized thin film of good quality can be formed. |