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filingDate 1992-01-17^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 1997-05-28^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ed218d0c27352205559de0a2a81bb80
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publicationDate 1997-05-28^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0521163-B1
titleOfInvention Aluminum alloy wiring layer, manufacturing thereof, and aluminum alloy sputtering target
abstract An aluminum alloy wiring layer includes only scandium of 0.01-1.0 weight %, or includes scandium of 0.01-1.0 weight % and at least one kind of element of 0.1-3.0 weight % selected from the group comprising silicon, titanium, copper, boron, hafnium and rare earth elements (but scandium is excluded). The residual part of the aluminum alloy wiring layer is aluminum of 99.99 % or more in purity. This wiring layer, its manufacturing method and an aluminum alloy sputtering target used therein are suitable to large scale integrated circuits of the next generation.
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