| abstract |
The improved material deposition process of the present invention utilizes a first, low temperature deposition step followed by a second, high temperature/high power deposition step. In the first deposition step a collimation plate (32) is placed between the sputtering target (18) and the substrate (12), such that a collimated stream of sputtered material is deposited upon the substrate (12). The collimated stream provides a seed layer (40) which aids in eliminating voids by partially filling the holes and grooves in the surface of the substrate (12). The second deposition step is conducted as a high temperature sputtering deposition. At the high temperature the sputtered material joins and flows with the seed layer (40), whereby the holes and grooves are more easily filled without voids and an improved planarized layer is achieved. |