http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0555858-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 |
| filingDate | 1993-02-11^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_abb18267de8d0ec051743e91ff5649ad |
| publicationDate | 1993-08-18^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0555858-A2 |
| titleOfInvention | Method of dry etching a polycide without using a CFC gas |
| abstract | A dry etching method for performing one-stage anisotropic etching of a W-polycide film without using a CFC (chlorofluorocarbon) gas is disclosed. The W-polycide film on a substrate is etched by using sulfur halide such as S₂Cl₂ and S₂Br₂ for an etching gas while heating the substrate within a temperature range of up to 90°C. Free S released from the sulfur halide is deposited on the substrate within the temperature range, thereby contributing to improvement of selectivity and anisotropy, and Cl* and Br* become etchants. Although WCl x and WBr x , which are etching reaction products, have low vapor pressure at a normal temperature and under normal pressure, WCl x and WBr x may be eliminated sufficiently under reduced pressure and heated conditions. Since F* is not formed in a plasma, no undercut is generated on an underlying polysilicon layer. Also, since C does not exist, particle pollution can be prevented and selectivity for a gate oxide film can be improved. If a nitrogen based compound, such as N₂, is added to the sulfur halide, deposition of sulfur nitride based compounds can be expected, and the wafer heating temperature can be raised up to 130°C. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2297864-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2297864-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0644582-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5994226-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0644582-A2 |
| priorityDate | 1992-02-14^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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