http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0580880-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30608 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate | 1992-07-08^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb16b0073291da5cc52a9e43ec2783ca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81a1770846e8bdbf9f1a27e7002ad63f |
| publicationDate | 1994-02-02^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0580880-A1 |
| titleOfInvention | Control of anisotropic silicon etching utilizing a selected catalyzed etchant |
| abstract | An improved method for anisotropically etching the (100) crystallographic plane of silicon wafers involves immersing the wafers in an etching solution containing an aromatic compound having at least two adjacent hydroxyl groups and a polar functional group on the ring, an amine, water, and a substituted 1,4-diazine. The etching solution is effective at etching silicon at a rate in excess of about 100 microns per hour. A quality etch at rates up to about 150 microns per hour or greater and with a high degree of uniformity can be achieved. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7994062-B2 |
| priorityDate | 1991-07-30^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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