| abstract |
Disclosed is a method for the formation of a thick silicon oxide film on the surface of a substrate. The method comprises forming a hydrogen silsesquioxane resin film on the surface of a substrate followed by converting the hydrogen silsesquioxane resin into silicon oxide ceramic by heating the resin film-bearing substrate in a mixed gas atmosphere of above 0 volume% up to 20 volume% oxygen and 80 volume% up to, but not including, 100 volume% inert gas until the content of silicon-bonded hydrogen in the silicon oxide product has reached ≦ 80% of the content of silicon-bonded hydrogen in the hydrogen silsesquioxane resin. |