| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8381805eba6d034fc77bd230dd02e6e2 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-125
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1064 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-10 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-065 |
| filingDate |
1993-01-28^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98deb34527b647009294efe4ed5f1d3f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_045f52eddc1897e071b2da924e990cd3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f9650e19740676550d34d0ed92727f7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ff68377de6e0a8da7fdd4f1177af6fd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c834b8c4fec2f7a1402645cc0df4592 |
| publicationDate |
1994-11-17^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0624284-A1 |
| titleOfInvention |
Tapered semiconductor laser gain structure with cavity spoiling grooves |
| abstract |
Semiconductor laser gain structure having a flared gain region (31) having cavity deflectors (48, 50) for receiving light which is reflected by the exit facet (38) and returned to the semiconductor and eliminating it from the gain region (31) so as to reduce or eliminate the proper oscillation. The limits of the gain region (31) are also designed to have a very low refractive index gradient, so as to minimize the reflection of light by the limits and its return to the gain region (31) . said gain structure (33) can be incorporated in a semiconductor laser oscillator or in a semiconductor laser amplifier depending on whether the input facet (34) has respectively undergone or has not undergone an anti-reflective treatment. The exit facet (38) undergoes an anti-reflective treatment in the two embodiments. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8306084-B2 |
| priorityDate |
1992-01-31^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |