http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0725969-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_daa48ed820a7dad29affa51e58caf757 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C7-006 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01C7-00 |
| filingDate | 1995-07-17^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc0edd28f7eadab554e3d3f994d30168 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0426a901044324197e979865dab8bfb2 |
| publicationDate | 1996-08-14^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0725969-A1 |
| titleOfInvention | Electrically resistive structure |
| abstract | An electrically resistive structure comprising a substrate (11) which is provided on at least one side with a first resistive film (13) and a second resistive film (17), the materials of these first and second films (13, 17) being mutually different, whereby an anti-diffusion film (15) is disposed between the first and second films (13, 17). The presence of such an anti-diffusion film (15) allows annealing of the resistive structure without significant degradation of its resistive properties. Suitable alloy materials for use in such an anti-diffusion film (15) include WTi, and particularly WTiN. Appropriate exemplary materials for the first resistive film (13) and second resistive film (17) include SiCr and CuNi alloys, respectively. |
| priorityDate | 1994-08-05^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419583196 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID104727 |
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