| abstract |
In a process for growing a ZnSe crystal by an MBE ornMOCVD process, N 2 gas dissociated by electromagnetic wavesnand vapor In are prepared at a ratio of N:In being 2:1. Thenatomic gases may be prepared by decomposing InN at a highntemperature with electromagnetic irradiation and adding N 2 ngas to the decomposed product. The atomic gases are fed onto ansubstrate in a crystal growth region, so as to simultaneouslyndope ZnSe with In and N at a ratio of 1:2. A n-type dopant Innsubstitutionally occupying a position of Zn makes a 1:1 couplenwith a p-type dopant N substitutionally occupying a position ofnSe, and another one N atom coordinates near the atomic couplenand serves as an acceptor. As a result, the acceptor is kept innactivated state up to higher concentration, and the ZnSencrystal can be heavily doped with the p-type dopant N. |