| abstract |
An initial single-crystalline diamond base materialn(50) is prepared from a flat plate having a major surfacen(50a) and side surfaces consisting of low-index planes fornhomoepitaxially vapor-depositing single-crystallinendiamond on the single-crystalline diamond base materialn(50), thereby forming single-crystalline diamond having anlarge area. Holding means (1) for the single-crystallinendiamond base material (50) consists of a material hardlynforming a compound with carbon, or is coated with such anmaterial. According to this method and this apparatus,nsingle-crystalline diamond can be stably formed on thensurfaces of the base material (50). Consequently, single-crystallinendiamond of high quality having a large areancan be stably produced in a shorter time by either plasmanCVD or a thermal filament method. |