| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K1-0201
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-4644
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-4676
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K1-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 |
| filingDate |
1998-07-18^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6308578f5c6336aa886b93b0519a964
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf499d5bb1b4eb60b9aaa3825fc24823 |
| publicationDate |
1999-04-28^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0911878-A2 |
| titleOfInvention |
Metalization system |
| abstract |
A multi-level integrated circuit metalization system having a composite dielectric layer comprising a layer 22 of diamond or sapphire. A plurality of patterned metalization layers is disposed over a semiconductor substrate 10. A composite dielectric layer is disposed between a pair of the metalization layers. The composite dielectric layer 22 comprises a layer of diamond or sapphire. The diamond or sapphire layer has disposed on a surface thereof one of the patterned metalization layers. A conductive via 34 passes through the composite layer. One end of the conductive via is in contact with diamond or sapphire layer. The diamond or sapphire layer conducts heat laterally along from the metalization layer disposed thereon to a heat sink provided by the conductive via. The patterned diamond or sapphire layer provides a mask during the second metalization deposition. Thus, the leads of the next metalization layer will be deposited directly on the diamond or sapphire layer which will serve as an etch stop during the metal etching process. <IMAGE> |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1848924-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1848924-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-02103790-A1 |
| priorityDate |
1997-09-26^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |