http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0937790-A3
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8feeca397e785f00839dcd24cb2ff209 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 1999-01-21^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_880451b29197b651fa68ff5950db6cf2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3e596b34f0f0d9c8aee3c4082974257 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2376840620a4bc6a3ba3c430892c5848 |
| publicationDate | 2003-08-27^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0937790-A3 |
| titleOfInvention | Method of making GaN single crystal and apparatus for making GaN single crystal |
| abstract | An apparatus comprises a Ga-disposing section in whichnGa is disposed; a seed-crystal-disposing section in whichna seed crystal of GaN is disposed; a synthesis vessel adaptednto accommodate the Ga-disposing section, the seed-crystal-disposingnsection, and a gas containing nitrogen;nheating means adapted to heat the Ga-disposing section andnthe seed-crystal-disposing section; and a control sectionnfor transmitting to the heating means a command for heatingnthe Ga to an evaporation temperature of Ga or higher andnheating the seed crystal to a temperature higher than thatnof the Ga, wherein the Ga evaporated by the heating meansnis adapted to react with the nitrogen of a nitrogen componentnin the gas so as to yield a GaN-forming gas, the GaN-formingngas being adapted to reach the seed-crystal-disposingnsection. |
| priorityDate | 1998-01-26^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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