| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-976
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G3-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
1999-08-27^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e9d0ce628f3ee33bc3e88b454bcce38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5d192d964cae66069e8bfdc1155eefc |
| publicationDate |
2001-09-26^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0984488-A3 |
| titleOfInvention |
Multilayer copper interconnect structure with copper oxide portions and manufacturing method thereof |
| abstract |
There is presented a semiconductor device includingnmultiple levels of copper interconnects; wherein the surface ofna copper interconnect corresponding to at least one underlyingnlayer of another copper interconnect layer is turned into coppernoxide to a thickness of 30 nm or more by oxidation conducted atnthe oxidation rate of 20 nm/min or less, and thereby the reflectionnof the exposure light from the lower-level copper interconnectnis prevented, in forming by means of photolithography a trenchnto form a copper interconnect through damascening. |
| priorityDate |
1998-08-31^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |