| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f481982f9992cbb527a6d31589832958 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-413
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-412 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-413
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-412 |
| filingDate |
1999-11-02^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_538b50752905f91bc958f6e810d038cc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37b300ac93da06e86ccd5543e58d890a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74e3bd22e7940d1dd01d3851943fdad0 |
| publicationDate |
2000-05-17^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1001431-A1 |
| titleOfInvention |
Capacitor loaded memory cell |
| abstract |
An apparatus and method for constructing a capacitor loaded memory cell. Thisncapacitor loaded memory cell operates as a static random access memory (SRAM) cell ifna particular capacitor and transistor configuration is used. Normally, capacitors are notnan obvious choice as a load device for a memory cell because the intrinsic nature ofncapacitors is one that blocks the flow of direct current, the invention takes into accountnthe secondary effects such as leakage of a particular dielectric used in the construction ofnthe capacitor to modify the current blocking nature of the capacitor. |
| priorityDate |
1998-11-09^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |