| abstract |
A resist stripping agent comprising a specific alkanolamine having atnleast one functional group represented by the following formula (I):n nwherein R 1 and R 2 are each hydrogen atom, C 1 -C 8 alkyl or C 1 -C 8 alkenyl. Thenresist stripping agent easily and efficiently removes resist films and resistnresidues remaining after etching or after ashing subsequent to etching innmanufacturing semiconductor devices at low temperatures in short period ofntime. The resist stripping agent is resistant to corrosion against materials fornsubstrate, circuits and insulating films. |