| abstract |
A method and apparatus for reducing oxidation of an interface (112) of a semiconductorndevice thereby improving adhesion of subsequently formed layers (108) and/or devicesnis disclosed. The semiconductor device has at least a first layer (104,106) and a second layer (108)nwherein the interface is disposed between said first and second layers. The method includesnthe steps of providing the first layer having a partially oxidized interface; introducingna hydrogen-containing plasma to the interface; reducing the oxidized interfacenand introducing second-layer-forming compounds to the hydrogen-containing plasma.nA concomitant apparatus (i.e., a semiconductor device interface) has a first insulatingnlayer, one or more conductive devices disposed within the insulating layer, the insulatingnlayer and conductive devices defining the interface, wherein the interface is treatednwith a continuous plasma treatment to remove oxidation and deposit a second layernthereupon. The insulating layer of the interface is selected from oxides and nitrides andnis preferably a nitride. |