| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02129
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4404
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45574
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-409
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02197
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45557 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-04 |
| filingDate |
1999-08-02^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84454c47314f9493e93877568ec8c549
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f64e114e5a253162741fc1e55029212b |
| publicationDate |
2001-07-11^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1115148-A1 |
| titleOfInvention |
Vapor growth method for metal oxide dielectric film and vapor growth device for metal oxide dielectric material |
| abstract |
The present invention relates to a vapor phasengrowth method of a metal oxide dielectric film andncapable of forming a metal oxide with excellent in bothnorientation and crystallinity on a plug at a lowntemperature and carries out film formation by introducingnthe organometal gases and an oxidizing gas into a vacuumnchamber through separate introduction inlets whilenheating the substrate set in the vacuum chamber atn1 × 10 -2 Torr or lower of the total pressure of thenvacuum chamber. Further, the present invention is forncarrying out film formation of a metal oxide dielectricnfilm with a perovskite type crystal structure by changingnfilm formation conditions and properly selecting optimumnconditions for first film formation conditions forninitial nuclei or layer formation and second filmnformation conditions for film formation of the perovskitentype crystal structure further on the formed initialnnuclei. The present invention further relates to a vapornphase growth apparatus to be employed for the vapor phasengrowth methods. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1413645-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7521745-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7605007-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8263419-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107058976-A |
| priorityDate |
1998-08-03^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |