http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1202353-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_14ba71eccbb5f65a22b78f39b3c6ffc3 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S257-922 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-573 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B20-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B20-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-112 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02 |
| filingDate | 2000-10-27^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d34e661466e0e5d388c5128b62417d3b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b49d441cf1eebcb4774d08e9e26d4a45 |
| publicationDate | 2002-05-02^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-1202353-A1 |
| titleOfInvention | Mask programmed ROM and method of fabrication |
| abstract | A read only memory device, mask programmable during the fabrication of the device, comprises a plurality of memory cells formed onto a semiconductor substrate and organized in rows and columns to form an array of memory cells, the memory cells belonging to a same row sharing a common gate functioning as address wordline, each cell comprising a first region and a second region of type of conductivity opposite to that of the semiconductor substrate, a first dielectric layer formed on the plurality of memory cells, first contacts with the first regions of the cells through the first dielectric layer, connecting in common the first regions to a node of the device at a reference voltage, second contacts, each one established with a respective second region through the first dielectric layer and through a second dielectric layer formed on the first dielectric layer, and intercepted by a respective bitline. Data stored in such a memory are made undecipherable by optical inspection if the second contacts are established with the second regions of only the memory cells programmed in a conductive state; interconnection contacts and false interconnection contacts are formed through the second dielectric layer, each geometrically above and in electrical continuity with one of the second contacts or geometrically above and in electrical discontinuity with one of the non contacted second regions of memory cells programmed in non conductive state; each bitline defined over the second dielectric layer, intercepting interconnection contacts and false interconnection contacts with the second regions of the cells belonging to a same column of the array. <IMAGE> <IMAGE> |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8049281-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2405531-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2405531-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6815816-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8258583-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6774413-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8564073-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7939946-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8679908-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102006039877-B4 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03098692-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102006039877-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8524553-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7935603-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8168487-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6740942-B2 |
| priorityDate | 2000-10-27^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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