http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1438739-A1

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filingDate 2002-09-24^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b83b8d340d622a6cb4e0b8281319caea
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publicationDate 2004-07-21^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-1438739-A1
titleOfInvention Sic bipolar semiconductor devices with few crystal defects
abstract A bipolar device (30) has at least one p-type layer (34) of single crystal silicon carbide and at least one n-type layer (33) of single crystal silicon carbide, wherein those portions of those stacking faults (40) that grow under forward operation are segregated from at least one of the interfaces between the active region and the remainder of the device.
priorityDate 2001-10-26^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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