http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1473379-A8

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filingDate 2002-10-28^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa5476e5d6c33622b23c8abb7b1b8de7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_535acb33cf12c3bace2090be7d59efbe
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publicationDate 2005-02-23^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-1473379-A8
titleOfInvention Metal barrier film production apparatus, metal barrier film production method, metal film production method, and metal film production apparatus
abstract A metal film production apparatus, comprising: a chambernaccommodating a substrate having a barrier metal film of anmetal nitride formed thereon; silicon-containing gas supplynmeans for supplying a gas containing silicon to a site abovena surface of the substrate; surface treatment plasmangeneration means which generates a gas plasma containingnsilicon to form nuclei of silicon atoms on a surface of thenbarrier metal film on the surface of the substrate; anmetallic etched member provided in the chamber; source gasnsupply means for supplying a source gas containing a halogennto an interior of the chamber between the substrate and thenetched member; plasma generation means which converts thensource gas containing the halogen into a plasma to generate ansource gas plasma so that the etched member is etched withnthe source gas plasma to form a precursor from a metalncomponent contained in the etched member and the source gas;nand control means which makes a temperature of the substratenlower than a temperature of the etched member to form thenmetal component of the precursor as a film on the barriernmetal film having the nuclei of silicon atoms formed on thensurface thereof.
priorityDate 2001-11-14^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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