Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed89ca88042d3b6f7afc21d7b6dd7b87 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-5806 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C12-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28229 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C10-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C8-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C10-60 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C8-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C10-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C12-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C10-02 |
filingDate |
2003-03-06^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc74b1c6ffffe579537706a5acd07689 |
publicationDate |
2004-12-08^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
EP-1483784-A2 |
titleOfInvention |
Method for forming thin film layers by simultaneous doping and sintering |
abstract |
The method includes the steps of doping a thin surface layer on the substrate with low energy ions of a dopant material, and heating the thin surface layer sufficiently to produce a reaction between the dopant material and the surface layer. The heating step is performed simultaneously with at least part of the doping step. The doping step may utilize plasma doping of the thin surface layer. In one embodiment, the doping step includes plasma doping of a silicon oxide layer with nitrogen ions. The heating step may io utilize thermal conduction or heating with radiation, such as heating with optical energy. The process may be used for forming dielectric layers having a thickness of 50 angstroms or less. |
priorityDate |
2002-03-13^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |