| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f1192a135e4bc40a5f201a9646f20172 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0465
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0615
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-8613 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-861 |
| filingDate |
2007-04-26^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5d42d4df239d2ddc63814797728c407
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_376442a382f2d9ea30652cda0106a182
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62b0d719d58fc9d0190d44827191f4fd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99ed2c7fcb6b8cc52f0fef4da9c5e838
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68dd848f5ccccb70042bd56f9a499410 |
| publicationDate |
2007-10-31^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1850396-A2 |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
As semiconductor regions in contact with a first main surface of a semiconductor base composed by forming an N- silicon carbide epitaxial layer on an N+ silicon carbide substrate connected to a cathode electrode, there are provided both an N+ polycrystalline silicon layer of a same conduction type as a conduction type of the semiconductor base and a P+ polycrystalline silicon layer of a conduction type different from the conduction type of the semiconductor base. Both the N+ polycrystalline silicon layer and the P+ polycrystalline silicon layer form a heterojunction with the semiconductor base, and are ohmically connected to the anode electrode. Moreover, the N+ polycrystalline silicon layer of the same conduction type as the conduction type of the semiconductor base is formed so as to contact the first main surface of the semiconductor base, and the P+ polycrystalline silicon layer of the conduction type different from the conduction type of the semiconductor base is formed in trenches dug on the first main surface of the semiconductor base. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103579366-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112349789-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103579366-B |
| priorityDate |
2006-04-28^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |