| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ebca25e4f737729fb927875476e58a9f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-44 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate |
2005-09-15^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f6291c092b6d5d98619db9f9b78b9e5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eaa876beac122308bca224b9c502c02a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20cd736722555b8899126e8f71c7685e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba99da2d0f9a126386217d21c46026b8 |
| publicationDate |
2010-12-29^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2267802-A2 |
| titleOfInvention |
High efficiency group III nitride LED with lenticular surface |
| abstract |
A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing Silicon carbide on or above the light emitting region. |
| priorityDate |
2004-09-22^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |