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publicationDate 2012-02-22^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-2421045-A1
titleOfInvention SECOND SCHOTTKY CONTACT METAL LAYER TO IMPROVE GaN SCHOTTKY DIODE PERFORMANCE
abstract A Schottky contact (110, 112) is disposed atop a surface of a semiconductor (106). A first Schottky contact metal layer (110) is disposed atop a first portion of the semiconductor surface (106). A second Schottky contact metal (112) is disposed atop a second portion of the surface layer and adjoins the first Schottky contact metal layer (110). The first Schottky contact metal layer (110) has a lower work function than the second Schottky contact metal layer (112).
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