Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0655 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J7-387 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13454 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1251 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1229 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-18 |
filingDate |
2010-12-02^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b24fb6b9e00975259a2ed489d3fb3020 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b8824664dd837b940f84325376a4b61 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0627bbb13b5a0800b1d3da8e45c95497 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad73abba4da969352b4e91c27e382c2d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40ae185ab17f97395102c6f444037cea |
publicationDate |
2012-12-12^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
EP-2533283-A1 |
titleOfInvention |
Semiconductor device and manufacturing method therefor |
abstract |
A semiconductor device (130) including: a bonding substrate (100); a thin film element (80) formed on the bonding substrate (100); and a semiconductor element (90a) bonded to the bonding substrate (100), the semiconductor element including a semiconductor element main body (50) and a plurality of underlying layers (51-54) stacked on a side of the semiconductor element main body facing the bonding substrate (100), and each of the underlying layers including an insulating layer and a circuit pattern on the insulating layer, wherein the underlying layer (54) closest to the bonding substrate (100) includes an extended section (E) formed by extending the circuit pattern toward the thin film element (80), a resin layer (120) is provided between the thin film element (80) and the semiconductor element (90a), and the thin film element (80) is connected to the semiconductor element main body (50) via a connection line (121a) provided on the resin layer (120), the extended section (E), and the circuit patterns. |
priorityDate |
2010-02-01^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |