http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2533283-A1

Outgoing Links

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filingDate 2010-12-02^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b24fb6b9e00975259a2ed489d3fb3020
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publicationDate 2012-12-12^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-2533283-A1
titleOfInvention Semiconductor device and manufacturing method therefor
abstract A semiconductor device (130) including: a bonding substrate (100); a thin film element (80) formed on the bonding substrate (100); and a semiconductor element (90a) bonded to the bonding substrate (100), the semiconductor element including a semiconductor element main body (50) and a plurality of underlying layers (51-54) stacked on a side of the semiconductor element main body facing the bonding substrate (100), and each of the underlying layers including an insulating layer and a circuit pattern on the insulating layer, wherein the underlying layer (54) closest to the bonding substrate (100) includes an extended section (E) formed by extending the circuit pattern toward the thin film element (80), a resin layer (120) is provided between the thin film element (80) and the semiconductor element (90a), and the thin film element (80) is connected to the semiconductor element main body (50) via a connection line (121a) provided on the resin layer (120), the extended section (E), and the circuit patterns.
priorityDate 2010-02-01^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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