| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02057
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-049
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02301 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2011-02-23^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7fd4fff14858c7a0a9913fbe188d3674
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02d0ec9f94216fc8b72126451aefef62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_afe93a88775b0a67534e4d8f35bbad0e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_652889f5c813b257db718f72782cbfae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_72f55c55655c9e6e41b30146db3f6c4d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f38e7917ff82e8104ccb6a66e565c933 |
| publicationDate |
2013-04-24^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2584594-A1 |
| titleOfInvention |
Method for manufacturing silicon carbide semiconductor device and apparatus for manufacturing silicon carbide semiconductor device |
| abstract |
A method of fabricating a SiC semiconductor device (200) includes the steps of preparing a silicon carbide semiconductor (100) including a first surface (100a) having impurities implanted at least partially, forming a second surface (100b) by dry etching the first surface (100a) of the silicon carbide semiconductor (100) using gas including hydrogen gas, and forming an oxide film (126) constituting the silicon carbide semiconductor device (200) on the second surface (100b). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9165779-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8940614-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9738991-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9018639-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10002760-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9279192-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9017804-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8860040-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9797064-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9337277-B2 |
| priorityDate |
2010-06-16^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |