| abstract |
The present invention relates to a device for bonding a first contact surface (3) of a first substrate (1) to a second contact surface (4) of a second substrate (2), wherein the second substrate (2) has at least one reaction layer (7) following features. a bonding chamber (20, 20 ', 27), a first electrode (21) and an oppositely disposed second electrode (22), - receiving means for receiving the substrates (2, 3) between the first electrode (21) and the second electrode (22), Reservoir formation means for forming a reservoir (5) in a reservoir formation layer (6) on the first contact surface (3) by applying the first contact surface (3) to a plasma generated by means of capacitive coupling of the electrodes (21,22), at the first electrode (21) during the plasma generation one of a second frequency (f 22 ) of the second electrode (22) different first frequency (f 21 ) can be applied, Means for contacting the first contact surface (3) with the second contact surface (4) to form a pre-bond connection, wherein the device comprises a chamber for forming the reservoir and a chamber provided separately for filling the reservoir and a, in particular separately provided chamber for forming the pre-bond connection, which are connected to each other directly via a vacuum system. |