| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2030-025 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01F1-69
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N30-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01F1-6845
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N30-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N30-64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01F1-684 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01F1-68 |
| filingDate |
2018-03-28^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b6a6b4ad2403f95e670fdf85cc792e7e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_322986e438372a7d4922a1806dbdd281
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3be18519048f17218c2e3917a1a8bd42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3b1719ebaba8276c4844a98894a6590
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63e23501e1661ded1a222f76c43b992f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90cffe85c848f3f77549b426cd591f2f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_abf5e5e36740cffa2140b3a90d7f34be |
| publicationDate |
2019-10-02^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-3546931-A1 |
| titleOfInvention |
Thermoresistive gas sensor |
| abstract |
A thermoresistive gas sensor (1), z. B. for a flow sensor or a thermal conductivity detector, comprises a gas-flowable by the flat grid (2) with grid bars (8), which consist of a semiconductor material (5) with a predetermined conductivity and are arranged in parallel next to each other in the lattice plane.n n n In order to achieve a high measuring sensitivity and mechanical stability, the grid webs (8) are S-shaped extending and electrically connected in parallel.n n n The semiconductor material (5) may be formed as a semiconductor layer (6) on a plate-shaped semiconductor substrate (3), wherein it extends over a window-like recess (7) in the semiconductor substrate (3) and forms the grid (2) there. The semiconductor layer (6) is doped outside the recess (7) in the regions of the two ends of the grating (2) at least over the width of the grating (2) until degeneracy and / or carries there metallizations (10, 11). The semiconductor layer (6) furthermore contains a separating structure (9) which is mutually insulating the two ends of the grid (2) and in which the semiconductor material (5) is removed or intrinsic. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11561208-B2 |
| priorityDate |
2018-03-28^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |