| abstract |
In a thermistor element, a thermistor body formed of a thermistor material, a conductive interlayer formed on the thermistor body, and an electrode layer formed on the conductive interlayer are provided, the conductive interlayer is formed along protrusions and recesses on a surface of the thermistor body, the conductive interlayer is a layer in which RuO<sub>2</sub> grains in contact with each other are uniformly distributed and SiO<sub>2</sub> interposes in gaps between the RuO<sub>2</sub> grains, and the conductive interlayer is formed in a state of adhering to the thermistor body along the protrusions and the recesses on the surface of the thermistor body. |