| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7782
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-841
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-85
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-267 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-291
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 |
| filingDate |
2021-09-20^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_909e63b3d16a343fa716ac9896aaa31d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a4f05c2c4c3bcac8e6be67a347e0e6c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe39c6df588eba155303963de37fbfa2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d3f8b4802c799348091d11ac7e92189
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba6134274be7f2f170b081d34f364803
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_250df98409b85e541065c8e692a51d6d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5662fbb244fda68913fd7fa3fc4edab0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5506a997df093bb3edf577600941205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a34750907fc4a81538290e9a0a9b113c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1364283faa0bc13b6e3efa026b9dbb38 |
| publicationDate |
2022-06-29^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-4020586-A1 |
| titleOfInvention |
Transition metal dichalcogenide nanosheet transistors and methods of fabrication |
| abstract |
A transistor includes a first channel layer over a second channel layer, where the first and the second channel layers include a monocrystalline transition metal dichalcogenide (TMD). The transistor structure further includes a source structure coupled to a first end of the first and second channel layers, a drain structure coupled to a second end of the first and second channel layers, a gate structure between the source material and the drain material, and between the first channel layer and the second channel layer. The transistor further includes a spacer laterally between the gate structure and the and the source structure and between the gate structure and the drain structure. A liner is between the spacer and the gate structure. The liner is in contact with the first channel layer and the second channel layer and extends between the gate structure and the respective source structure and the drain structure. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-4156295-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023046364-A1 |
| priorityDate |
2020-12-23^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |