http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-4020592-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_59c820ad08f8533c7440ae1d9235b168 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1066 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7783 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-432 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-475 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 |
| filingDate | 2020-12-22^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe6a57a7f7692cabc77029097e30a62a |
| publicationDate | 2022-06-29^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-4020592-A1 |
| titleOfInvention | Group iii nitride-based transistor device |
| abstract | A Group III nitride-based transistor device is provided that comprises a Group III nitride-based body (11) and a p-type Schottky gate comprising a metal gate (13) on a p-doped Group III nitride structure (14). The p-doped Group III nitride structure comprises an upper p-doped GaN layer (26) in contact with the metal gate and having a thickness d<sub>1</sub>, a lower p-doped Group III nitride layer (27) having a thickness d<sub>2</sub> and comprising p-doped GaN that is arranged on and in contact with the Group III nitride-based body and at least one p-doped Al<sub>x</sub>Ga<sub>1-x</sub>N layer (28) arranged between the upper p-doped GaN layer and the lower p-doped Group III nitride layer, wherein 0 < x < 1. The thickness d<sub>2</sub> of the lower p-doped Group III nitride layer is larger than the thickness d<sub>1</sub> of the upper p-doped GaN layer. |
| priorityDate | 2020-12-22^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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