http://rdf.ncbi.nlm.nih.gov/pubchem/patent/ES-2352219-T3
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7442785d180a512355c104ebdd48b233 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-544 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0687 |
| filingDate | 2006-12-21^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-02-16^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3e9c5f62a4c0e5f6d57c24c678723db http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4fd2b12236cf67169ad8232fbee5475 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb531ad328be78dabef32ae784cc3987 |
| publicationDate | 2011-02-16^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | ES-2352219-T3 |
| titleOfInvention | PHOTOVOLTAIC CELLS IN TANDEM. |
| abstract | Tandem photovoltaic cell system (100, 400), comprising: first (110, 410) and second (170, 470) electrodes; a recombination layer (140, 440) between the first (110, 410) and second (170, 470) electrodes, in which the recombination layer refers to a layer in a tandem cell in which electrons generated from from a first cell they recombine with gaps generated from a second cell; the recombination layer (140, 440) comprises a semiconductor material; and a first photoactive layer (130, 430) between the first electrode (110, 410) and the recombination layer (140, 440); and a second photoactive layer (150, 450) between the second electrode (170, 470) and the recombination layer (140, 440); characterized in that the recombination layer (140, 440) comprises two layers (442, 444), a layer (444) comprising a semiconductor material of type p and the other layer (442) comprising a semiconductor material of type n; wherein the semiconductor material of p-type comprises a polymer selected from the group consisting of polythiophenes, polyanilines, polyvinylcarbazoles, polyphenylenes, polifenilvinilenos, polysilanes, politienilenvinilenos, poliisotianaftanenos, policiclopentaditiofenos, polisilaciclopentaditiofenos, policiclopentaditiazoles, politiazolotiazoles, polythiazoles, polibenzotiadiazoles, poly (oxides thiophene), poly (cyclopentadithiophene oxides), polydiadiazoloquinoxalines, polybenzoisothiazoles, polibenzothiazoles, polythienothiophenes, poly (thienothiophene oxides), polyditienothiophenes, poly (dithienothiol ethenethiophene) poly (oxides); and wherein the n-type semiconductor material comprises a metal oxide. |
| priorityDate | 2005-12-21^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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