http://rdf.ncbi.nlm.nih.gov/pubchem/patent/ES-2586331-T3
Outgoing Links
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| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-8083 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66924 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0475 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02595 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66916 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0465 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-808 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-337 |
| filingDate | 2012-09-05^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-10-13^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db8228749de6646f6bc94639dcb13c56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_509379d997f73a1611066fd4ac15a3a6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af0f7f4f7331dbee633597d2187985b1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_174480f350ec845a546bc2b757651f8c |
| publicationDate | 2016-10-13^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | ES-2586331-T3 |
| titleOfInvention | Manufacturing procedure of a JFET junction field effect transistor |
| abstract | Method of manufacturing a field effect transistor of trench gate type comprising: - The formation (110) of at least one ditch (11, 12, 13) in an active semiconductor layer (1) of a first type of conductivity of a substrate comprising two opposite faces called front face and rear face, - The primary implantation (120) of ions having a second type of conductivity so that each ditch of the substrate is implanted to form an active door region, - The deposit (160) of a layer of polycrystalline silicon of the second type of conductivity on the active region of the implanted door, - The partial oxidation (160) of the polycrystalline silicon layer to obtain an electrically insulating film (3 ') of polycrystalline silicon oxidized on a non-oxidized polycrystalline silicon sublayer, the polycrystalline silicon sublayer and the implanted area forming an active door region, and - The metallization (180) of the substrate s lock its front face to form an active source region, and - The metallization (180) of the substrate on the other face to form an active drainage region. said process being characterized in that the formation stage comprises the sub-stages of: - Deposit of a primary mask (4) on the front face of the semiconductor substrate, the primary mask including a main opening (41) and two subsidiary openings (42, 43), the dimensions of the main opening being greater than the dimensions of the subsidiary openings, - Primary etching of the substrate through the main opening to form a main ditch (11), and through the subsidiary openings to form two subsidiary ditches (12, 13), the primary implantation stage being performed through the primary mask, and because the procedure further comprises: - a stage (130) for depositing a secondary engraving mask (5) on the front face of the substrate subsequently to the primary implantation stage, the said secondary engraving mask including a secondary engraving opening (51) at the level of l to main ditch (11), - a stage (140) of secondary engraving of the substrate through the secondary engraving opening (51) to form a secondary ditch (111) in the main ditch (11). |
| priorityDate | 2012-09-05^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419549006 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID9863 |
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