| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c60cbeb32859b75d089103559c856e48 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24355 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02447
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02634
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0495 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36 |
| filingDate |
2009-01-14^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-02-21^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77e730cec5bcebcaac3ede987358f0b2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bac9892cfe828c4c9489205e6b922f47
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68ebec350fc2270e40e937562456ccea
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_12b5c314c8ff3cc5a15aa35c33367413
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e40b0a6460f8568b0cbbc0eedc205b6 |
| publicationDate |
2017-02-21^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
ES-2602565-T3 |
| titleOfInvention |
Monocrystalline silicon carbide ingot, and epitaxial substrate and wafer obtained from the monocrystalline silicon carbide ingot |
| abstract |
A single crystal silicon carbide ingot, comprising single crystal silicon carbide containing a donor-type impurity at a concentration of 2 x 1018 cm-3 to 6 x 1020 cm-3 and an acceptor-type impurity at a concentration of 1 x 1018 cm-3 to 5.99 x 1020 cm-3 and where the concentration of the donor-type impurity is greater than the concentration of the acceptor-type impurity and the difference is 1 x 1018 cm-3 at 5.99 x 1020 cm-3. |
| priorityDate |
2008-01-15^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |